AOS 技术交流高峰论坛

会议介绍 / About The Meeting

  • 部分演讲专家合影
  • 会议现场情况
  • AOS CEO 张复兴先生 演讲


2017年6月23日,业内著名的功率半导体生产商 AOS 万国半导体,特邀 IGBT 发明人“B.Jayant Baliga” 教授等海内外知名专家在为大家带来 IGBT/IPM/SiC/GaN 等相关议题的技术盛宴,现场近100多个公司近300位研发人员相互探讨相关技术的发展与应用。 本次会议于23日下午17:00在上海浦西洲际酒店圆满落幕。

视频回顾 / Video Review

会议花絮 / Meeting Tidbits


  • 签到入场
  • 参会工程师合影
  • 会议现场情况
  • 会议现场情况
  • AOS 的 Sales VP 薛兵
  • AOS 的 CEO 张复兴
  • 半导体行业协会 徐小田 秘书长
  • Jayant Baliga 教授
  • Madhur Bobde 博士
  • Bum-Seok Suh 博士
  • 产品资深总监 David Sheridan
  • 上海海事大学教授 汤天浩
  • 现场答疑互动
  • 会后幸运大抽奖

邀请嘉宾 / Invited Guests

新品推荐 / New Product

AOS 发布专为高速开关设计 IGBTs 系列新产品 650V H2

AOK40B65H2AL 基于最新 AlphaIGBT™ 技术平台设计,使关断损耗和导通损耗达到最佳平.....

AOS发布专为高速开关设计IGBTs系列新产品650V H2
AOS 推出首款USB Type-C 开关芯片

AOZ1375 是双向电流限制开关,并且可有效屏蔽反向反灌电流,提供完善保护功能和软启动....

AOS推出首款USB Type-C 开关芯片
AOS 推出 100V 同步整流 MOSFET 提供 USB PD 完美解决方案


AOS推出100V同步整流MOSFET 提供USB PD完美解决方案
Professor B. Jayant Baliga
国际知名科学家, IGBT 唯一发明人

Dr. Baliga is an internationally renowned scientist, author of 19 books and over 550 publications, and an established educator in the field of power semiconductor devices with 120 U.S. Patents to his name. Dr. Baliga is also a serial entrepreneur having founded four successful companies in North Carolina with venture capital financing. Among his inventions, the most widely commercialized device is the Insulated Gate Bipolar Transistor (IGBT) extensively used around the globe for compact fluorescent lamps, air-conditioning, home appliance controls, robotics, electric-cars/bullet-trains and compact defibrillators projected by the AMA to save 100,000 lives a year. The energy efficiency improvements derived from IGBTs have saved world-wide consumers more than $ 23 Trillion while reducing carbon dioxide emissions by more than 100 Trillion pounds during the last 25 years.

At the age of 45, he was elected into the prestigious National Academy of Engineering, the highest honor in the engineering profession. President Obama presented the National Medal of Technology and Innovation, the highest honor conferred by the United States Government to an Engineer, to Dr. Baliga in 2011. He received the North Carolina Award for Science, the highest honor given by the state to a civilian, from Governor Purdue in 2012. In 2014, he was awarded the highest IEEE recognition, the IEEE Medal of Honor, in Amsterdam NL. He is the recipient of the 2015 Global Energy Prize awarded in St. Petersburg, Russian Federation. In 2016, he was inducted into the National Inventors Hall of Fame as the sole inventor of the IGBT. He was made a Fellow of the National Academy of Inventors in April 2017.


IEEE Senior Member;上海电源学会理事长。 在国内外公开发表学术论文200多篇,已有50多篇论文被EI或ISTP收录。

Dr. Madhur Bobde
AOS 万国半导体器件技术副总裁

Madhur Bobde received his Bachelors and Masters degree (Integrated) from the Indian Institute of Technology, Bombay, India in 1997 and his PhD. from North Carolina State University in 2000 under the guidance of Prof. Jay Baliga. His PhD. Field of study was Accumulation channel devices (ACCUFETs and ACBTs).

He is currently serving as the Vice President of Device Technology at Alpha & Omega Semiconductor. During his 10+ year tenure at AOS, he has been involved in development of wide range of discrete technologies including high performance IGBTs and Fast Recover Diodes; Charge balanced HV MOSFETs (Trench MOS and Buried layers) and Split Gate transistor & high density trench FETs for Low & Medium Voltage applications. Prior to that, Madhur was employed with Intel Corporation where he was involved with the development of design methodology of Static RAM and Content Addressable Memory Cells for 3 generations of Pentium Microprocessors.

He holds 91 US granted patents and authored & presented several technical papers in ISPSD, APEC and other conferences. He is currently serving on the technical committee of ISPSD.

Dr. Bum-Seok Suh
AOS 万国半导体 IGBT 产品线副总裁

Dr. Suh received the Ph.D. Degree in electrical engineering from Hanyang University, Seoul, Korea, in 1996. From 1996 to 1998, he was an Associate Researcher in the Department of Electrical and Computer Engineering, University of Wisconsin,Madison, USA, involved in the development of an active gate drive and protection circuit for high-power IGBTs.

From 1998 to 2007, he worked as a head of Smart Power Module product line for Fairchild Semiconductor.

From 2007 to 2010, he worked as a director of molded power module product line for Infineon Technologies.

From 2010 to 2013, he was with Samsung Electro-Mechanics as a Vice President. Since 2014, he has been a Vice President of IGBT and Module product lines in Alpha and Omega Semiconductor.

Dr. David Sheridan
AOS 万国半导体 Wide Bandgap产品资深总监

David Sheridan received his B.S., M.S., and Ph.D. degrees in electrical engineering from Auburn University in 1995, 1997, and 2001, respectively.

His research in WBG devices started in 1995 with the development of high temperature SiC devices and packaging and extending to optimization of process, design and edge termination techniques for early multi-kV SiC JBS diodes.

From 2001 until 2006 he was with the IBM Semiconductor Research and Development Center working on device design for several generations of SiGe BiCMOS and CMOS technologies from 0.5um to 32nm. 

In 2006 he was Vice President of Technology at the SiC start-up SemiSouth Laboratories, responsible for product and device design of high voltage (600V-1.7kV) JFETs, JBS didoes, and power modules.

In 2012 Dr. Sheridan joined RFMD as the Director of Engineering for Power Conversion Devices where he manages the GaN power products and technology direction. Since 2015 he has been Sr. Director of GaN Products at Alpha and Omega Semiconductor.