节能减排，低碳经济已是全球发展的趋势，“中国制造2025”将进一步推动功率器件市场快速增长。IGBT/IPM 目前是功率半导体的技术前沿。SiC 以及 GaN 更是半导体材料未来发展方向。AOS 将于2017年6月23日举办 IGBT/IPM/SiC/GaN 技术交流高峰论坛，探讨相关技术的发展与应用，并希望本次论坛能进一步推动行业尖端技术发展并促进顶级客户技术交流。我们邀请了海内外知名专家（包括特邀专家：IGBT 发明人B.Jayant Baliga 教授）为大家带来 IGBT/IPM/SiC/GaN 等相关议题的技术盛宴，相信您必将不虚此行。
AOS 万国半导体 IGBT 产品线
AOS 万国半导体 Wide Bandgap
AOS VP / Bing Xue
AOS CEO / Mike Zhang
AOS IGBT/FRD 发展与历程
Dr. Madhur Bobde
Dr. Brian Suh
AOS GaN/SiC 技术发展历程
Dr. David Sheridan
Q&A 及 幸运大抽奖
Dr. Baliga is an internationally renowned scientist, author of 19 books and over 550 publications, and an established educator in the field of power semiconductor devices with 120 U.S. Patents to his name. Dr. Baliga is also a serial entrepreneur having founded four successful companies in North Carolina with venture capital financing. Among his inventions, the most widely commercialized device is the Insulated Gate Bipolar Transistor (IGBT) extensively used around the globe for compact fluorescent lamps, air-conditioning, home appliance controls, robotics, electric-cars/bullet-trains and compact defibrillators projected by the AMA to save 100,000 lives a year. The energy efficiency improvements derived from IGBTs have saved world-wide consumers more than $ 23 Trillion while reducing carbon dioxide emissions by more than 100 Trillion pounds during the last 25 years.
At the age of 45, he was elected into the prestigious National Academy of Engineering, the highest honor in the engineering profession. President Obama presented the National Medal of Technology and Innovation, the highest honor conferred by the United States Government to an Engineer, to Dr. Baliga in 2011. He received the North Carolina Award for Science, the highest honor given by the state to a civilian, from Governor Purdue in 2012. In 2014, he was awarded the highest IEEE recognition, the IEEE Medal of Honor, in Amsterdam NL. He is the recipient of the 2015 Global Energy Prize awarded in St. Petersburg, Russian Federation. In 2016, he was inducted into the National Inventors Hall of Fame as the sole inventor of the IGBT. He was made a Fellow of the National Academy of Inventors in April 2017.
Madhur Bobde received his Bachelors and Masters degree (Integrated) from the Indian Institute of Technology, Bombay, India in 1997 and his PhD. from North Carolina State University in 2000 under the guidance of Prof. Jay Baliga. His PhD. Field of study was Accumulation channel devices (ACCUFETs and ACBTs).
He is currently serving as the Vice President of Device Technology at Alpha & Omega Semiconductor. During his 10+ year tenure at AOS, he has been involved in development of wide range of discrete technologies including high performance IGBTs and Fast Recover Diodes; Charge balanced HV MOSFETs (Trench MOS and Buried layers) and Split Gate transistor & high density trench FETs for Low & Medium Voltage applications. Prior to that, Madhur was employed with Intel Corporation where he was involved with the development of design methodology of Static RAM and Content Addressable Memory Cells for 3 generations of Pentium Microprocessors.
He holds 91 US granted patents and authored & presented several technical papers in ISPSD, APEC and other conferences. He is currently serving on the technical committee of ISPSD.
Dr. Suh received the Ph.D. Degree in electrical engineering from Hanyang University, Seoul, Korea, in 1996. From 1996 to 1998, he was an Associate Researcher in the Department of Electrical and Computer Engineering, University of Wisconsin,Madison, USA, involved in the development of an active gate drive and protection circuit for high-power IGBTs.
From 1998 to 2007, he worked as a head of Smart Power Module product line for Fairchild Semiconductor.
From 2007 to 2010, he worked as a director of molded power module product line for Infineon Technologies.
From 2010 to 2013, he was with Samsung Electro-Mechanics as a Vice President. Since 2014, he has been a Vice President of IGBT and Module product lines in Alpha and Omega Semiconductor.
David Sheridan received his B.S., M.S., and Ph.D. degrees in electrical engineering from Auburn University in 1995, 1997, and 2001, respectively.
His research in WBG devices started in 1995 with the development of high temperature SiC devices and packaging and extending to optimization of process, design and edge termination techniques for early multi-kV SiC JBS diodes.
From 2001 until 2006 he was with the IBM Semiconductor Research and Development Center working on device design for several generations of SiGe BiCMOS and CMOS technologies from 0.5um to 32nm.
In 2006 he was Vice President of Technology at the SiC start-up SemiSouth Laboratories, responsible for product and device design of high voltage (600V-1.7kV) JFETs, JBS didoes, and power modules.
In 2012 Dr. Sheridan joined RFMD as the Director of Engineering for Power Conversion Devices where he manages the GaN power products and technology direction. Since 2015 he has been Sr. Director of GaN Products at Alpha and Omega Semiconductor.